EGN26C070I2D Image

EGN26C070I2D

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The EGN26C070I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 45.8 dBm, Power(W) 38.02 W, Saturated Power 48 to 48.8 dBm, Power Gain (Gp) 17 to 18 dB. Tags: Flanged. More details for EGN26C070I2D can be seen below.

Product Specifications

    Product Details

    • Part Number :
      EGN26C070I2D
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.6 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application Type :
      L Band
    • Application :
      Base Station, LTE
    • Frequency :
      2.6 GHz
    • Power :
      45.8 dBm
    • Power(W) :
      38.02 W
    • Saturated Power :
      48 to 48.8 dBm
    • Power Gain (Gp) :
      17 to 18 dB
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Drain Efficiency :
      30 to 35%
    • Power Dissipation (Pdiss) :
      75 W
    • Thermal Resistance :
      2.5 to 3 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Forward Gate Current : 76 mA, Reverse Gate Current : -2.6 mA

    Technical Documents

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