EGN26C210I2D Image

EGN26C210I2D

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The EGN26C210I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 50.5 dBm, Power(W) 112.2 W, Saturated Power 52 to 53 dBm, Power Gain (Gp) 15 to 16 dB. Tags: Flanged. More details for EGN26C210I2D can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGN26C210I2D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    2.6 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L Band
  • Application
    Base Station, LTE
  • Frequency
    2.6 GHz
  • Power
    50.5 dBm
  • Power(W)
    112.2 W
  • Saturated Power
    52 to 53 dBm
  • Power Gain (Gp)
    15 to 16 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    25 to 30%
  • Power Dissipation (Pdiss)
    173 W
  • Thermal Resistance
    1.1 to 1.3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 204 mA, Reverse Gate Current : -7.8 mA

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