ELM1314-9F Image

ELM1314-9F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The ELM1314-9F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 39 to 39.5 dBm, Power(W) 7.94 to 8.91 W, P1dB 39 to 39.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Flange. More details for ELM1314-9F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      ELM1314-9F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      13.75 to 14.5 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      Ku Band
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      39 to 39.5 dBm
    • Power(W) :
      7.94 to 8.91 W
    • P1dB :
      39 to 39.5 dBm
    • Power Gain (Gp) :
      5 to 6 dB
    • Power Added Effeciency :
      0.3
    • Supply Voltage :
      10 V
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      2400 to 6200 A
    • IMD :
      -25 to -30 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      3.5 to 4.2 Degree C/W
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 19.5 mA, Channel Temperature : 155 Degree C

    Technical Documents

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