ELM1314-9F Image

ELM1314-9F

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The ELM1314-9F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 39 to 39.5 dBm, Power(W) 7.94 to 8.91 W, P1dB 39 to 39.5 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Flange. More details for ELM1314-9F can be seen below.

Product Specifications

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Product Details

  • Part Number
    ELM1314-9F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    13.75 to 14.5 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    Ku Band
  • Frequency
    13.75 to 14.5 GHz
  • Power
    39 to 39.5 dBm
  • Power(W)
    7.94 to 8.91 W
  • P1dB
    39 to 39.5 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.3
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    2400 to 6200 A
  • IMD
    -25 to -30 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.5 to 4.2 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 19.5 mA, Channel Temperature : 155 Degree C

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