ELM6472-4PS Image

ELM6472-4PS

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The ELM6472-4PS from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6.4 to 7.2 GHz, Power 35 to 36 dBm, Power(W) 3.16 to 3.98 W, P1dB 35 to 36 dBm, Power Gain (Gp) 9.5 to 11 dB. Tags: Surface Mount. More details for ELM6472-4PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    ELM6472-4PS
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    6.4 to 7.2 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C Band
  • Frequency
    6.4 to 7.2 GHz
  • Power
    35 to 36 dBm
  • Power(W)
    3.16 to 3.98 W
  • P1dB
    35 to 36 dBm
  • Power Gain (Gp)
    9.5 to 11 dB
  • Power Added Effeciency
    0.36
  • Transconductance
    3400 mS
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1100 to 2600 mA
  • IMD
    -43 to -40 dBc
  • Thermal Resistance
    4.5 to 5.5 Degree C/W
  • Package Type
    Surface Mount
  • Package
    IB
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 71.5 Degree C, Forward Gate Current : 16 mA, Channel Temperature : 155 Degree C

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