ELM7785-4PS Image

ELM7785-4PS

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The ELM7785-4PS from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 35 to 36 dBm, Power(W) 3.16 to 3.98 W, P1dB 35 to 36 dBm, Power Gain (Gp) 8.5 to 10 dB. Tags: Surface Mount. More details for ELM7785-4PS can be seen below.

Product Specifications

    Product Details

    • Part Number :
      ELM7785-4PS
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      7.7 to 8.5 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      7.7 to 8.5 GHz
    • Power :
      35 to 36 dBm
    • Power(W) :
      3.16 to 3.98 W
    • P1dB :
      35 to 36 dBm
    • Power Gain (Gp) :
      8.5 to 10 dB
    • Power Added Effeciency :
      0.34
    • Transconductance :
      3400 mS
    • Supply Voltage :
      10 V
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1100 to 2600 mA
    • IMD :
      -43 to -40 dBc
    • Thermal Resistance :
      4.5 to 5.5 Degree C/W
    • Package Type :
      Surface Mount
    • Package :
      IK
    • RoHS :
      Yes
    • Storage Temperature :
      -40 to 125 Degree C
    • Note :
      Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 71.5 Degree C, Forward Gate Current : 16 mA, Channel Temperature : 155 Degree C

    Technical Documents

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