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The FHX45X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Gain 10 to 20 dB, Noise Figure 0.55 to 0.65 dB, Supply Voltage 2 V, Drain Current 10 to 60 mA. Tags: Chip. More details for FHX45X can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
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