FHX45X

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FHX45X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Gain 10 to 20 dB, Noise Figure 0.55 to 0.65 dB, Supply Voltage 2 V, Drain Current 10 to 60 mA. Tags: Chip. More details for FHX45X can be seen below.

Product Specifications

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Product Details

  • Part Number
    FHX45X
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    12 GHz, 10 to 20 dB Gain GaAs HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaAs
  • Application Industry
    SATCOM
  • Frequency
    12 GHz
  • Gain
    10 to 20 dB
  • Noise Figure
    0.55 to 0.65 dB
  • Supply Voltage
    2 V
  • Drain Current
    10 to 60 mA
  • Thermal Resistance
    155 to 200 Degree C/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Gate Source Breakdown Voltage : -0.3 V

Technical Documents

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