FLC087XP

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

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The FLC087XP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 27.5 to 28.5 dBm, Power(W) 0.56 to 0.71 W, P1dB 27.5 to 28.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Chip. More details for FLC087XP can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLC087XP
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      8 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      8 GHz
    • Power :
      27.5 to 28.5 dBm
    • Power(W) :
      0.56 to 0.71 W
    • P1dB :
      27.5 to 28.5 dBm
    • Power Gain (Gp) :
      6 to 7 dB
    • Power Added Effeciency :
      0.315
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      300 to 450 mA
    • Thermal Resistance :
      25 to 26 Degree C
    • Package Type :
      Chip
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

    Technical Documents

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