FLC087XP

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLC087XP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 27.5 to 28.5 dBm, Power(W) 0.56 to 0.71 W, P1dB 27.5 to 28.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Chip. More details for FLC087XP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC087XP
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    8 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C Band
  • Frequency
    8 GHz
  • Power
    27.5 to 28.5 dBm
  • Power(W)
    0.56 to 0.71 W
  • P1dB
    27.5 to 28.5 dBm
  • Power Gain (Gp)
    6 to 7 dB
  • Power Added Effeciency
    0.315
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    300 to 450 mA
  • Thermal Resistance
    25 to 26 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

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