FLL200IB-2 Image

FLL200IB-2

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLL200IB-2 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 41.5 to 42.5 dBm, Power(W) 14.13 to 17.78 W, P1dB 41.5 to 42.5 dBm, Power Gain (Gp) 10 to 13 dB. Tags: Flange. More details for FLL200IB-2 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLL200IB-2
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.3 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      L Band
    • Frequency :
      2.3 GHz
    • Power :
      41.5 to 42.5 dBm
    • Power(W) :
      14.13 to 17.78 W
    • P1dB :
      41.5 to 42.5 dBm
    • Power Gain (Gp) :
      10 to 13 dB
    • Power Added Effeciency :
      0.34
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      4800 to 12000 mA
    • Thermal Resistance :
      1.6 to 1.8 Degree C/W
    • Package Type :
      Flange
    • Package :
      IB
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 80 Degree C

    Technical Documents

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