FLL357ME Image

FLL357ME

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLL357ME from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.3 GHz, Power 34.5 to 35.5 dBm, Power(W) 2.82 to 3.55 W, P1dB 34.5 to 35.5 dBm, Power Gain (Gp) 10.5 to 11.5 dB. Tags: Flange. More details for FLL357ME can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLL357ME
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.3 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      L Band
    • Frequency :
      2.3 GHz
    • Power :
      34.5 to 35.5 dBm
    • Power(W) :
      2.82 to 3.55 W
    • P1dB :
      34.5 to 35.5 dBm
    • Power Gain (Gp) :
      10.5 to 11.5 dB
    • Power Added Effeciency :
      0.46
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1200 to 1800 mA
    • Thermal Resistance :
      7.5 to 10 Degree C/W
    • Package Type :
      Flange
    • Package :
      ME
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.