FLM1011-20F Image

FLM1011-20F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM1011-20F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 10.7 to 11.7 GHz, Power 42 to 43 dBm, Power(W) 15.85 to 19.95 W, P1dB 42 to 43 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flange. More details for FLM1011-20F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM1011-20F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      10.7 to 11.7 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      X Band, Ku Band
    • Frequency :
      10.7 to 11.7 GHz
    • Power :
      42 to 43 dBm
    • Power(W) :
      15.85 to 19.95 W
    • P1dB :
      42 to 43 dBm
    • Power Gain (Gp) :
      6 to 7 dB
    • Power Added Effeciency :
      0.27
    • Supply Voltage :
      10 V
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      6000 to 16200 mA
    • IMD :
      -45 to -42 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.4 to 1.6 Degree C/W
    • Package Type :
      Flange
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 64 mA, Channel Temperature : 175 Degree C

    Technical Documents

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