FLM1314-3F Image

FLM1314-3F

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM1314-3F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 34 to 35 dBm, Power(W) 2.51 to 3.16 W, P1dB 34 to 35 dBm, Power Gain (Gp) 5 to 5.5 dB. Tags: Flange. More details for FLM1314-3F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM1314-3F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    13.75 to 14.5 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X Band, Ku Band
  • Frequency
    13.75 to 14.5 GHz
  • Power
    34 to 35 dBm
  • Power(W)
    2.51 to 3.16 W
  • P1dB
    34 to 35 dBm
  • Power Gain (Gp)
    5 to 5.5 dB
  • Power Added Effeciency
    0.25
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    900 to 1100 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    5 to 6 Degree C/W
  • Package Type
    Flange
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 1400 to 2100 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 66 Degree C, Channel Temperature : 175 Degree C

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