FLM1314-6F Image

FLM1314-6F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

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The FLM1314-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 36.5 to 37.5 dBm, Power(W) 4.47 to 5.62 W, P1dB 36.5 to 37.5 dBm, Power Gain (Gp) 5 to 5.5 dB. Tags: Flange. More details for FLM1314-6F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM1314-6F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      13.75 to 14.5 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      X Band, Ku Band
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      36.5 to 37.5 dBm
    • Power(W) :
      4.47 to 5.62 W
    • P1dB :
      36.5 to 37.5 dBm
    • Power Gain (Gp) :
      5 to 5.5 dB
    • Power Added Effeciency :
      0.22
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1800 to 2100 mA
    • IMD :
      -45 to -42 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      4 to 4.5 Degree C/W
    • Package Type :
      Flange
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 2800 to 4200 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

    Technical Documents

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