FLM2023L-30F Image

FLM2023L-30F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM2023L-30F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.025 to 2.285 GHz, Power 44 to 45 dBm, Power(W) 25.12 to 31.62 W, P1dB 44 to 45 dBm, Power Gain (Gp) 12 to 13 dB. Tags: Flange. More details for FLM2023L-30F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM2023L-30F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.025 to 2.285 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      2.025 to 2.285 GHz
    • Power :
      44 to 45 dBm
    • Power(W) :
      25.12 to 31.62 W
    • P1dB :
      44 to 45 dBm
    • Power Gain (Gp) :
      12 to 13 dB
    • Power Added Effeciency :
      0.43
    • Transconductance :
      4000 mS
    • Supply Voltage :
      10 V
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      7000 to 16000 mA
    • IMD :
      -44 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.2 to 1.4 Degree C/W
    • Package Type :
      Flange
    • Package :
      IK
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : 2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 54 mA

    Technical Documents

Click to view more product details on manufacturer's website  »

Find Transistors

Search from 1896 products from 22 companies

  • To
  • To
  • Search

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.