FLM5359-4F Image

FLM5359-4F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM5359-4F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.3 to 5.9 GHz, Power 35.5 to 36.5 dBm, Power(W) 3.55 to 4.47 W, P1dB 35.5 to 36.5 dBm, Power Gain (Gp) 9.5 to 10.5 dB. Tags: Flange. More details for FLM5359-4F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM5359-4F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      5.3 to 5.9 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      5.3 to 5.9 GHz
    • Power :
      35.5 to 36.5 dBm
    • Power(W) :
      3.55 to 4.47 W
    • P1dB :
      35.5 to 36.5 dBm
    • Power Gain (Gp) :
      9.5 to 10.5 dB
    • Power Added Effeciency :
      0.37
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1100 to 1300 mA
    • IMD :
      -46 to -44 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      5 to 6 Degree C/W
    • Package Type :
      Flange
    • Package :
      IB
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 1950 to 2900 mA, Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : +/-0.6 dB, Channel Temperature Rise : 80 Degree C

    Technical Documents

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