FLM6472-12F Image

FLM6472-12F

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM6472-12F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6.4 to 7.2 GHz, Power 40.5 to 41.5 dBm, Power(W) 11.22 to 14.13 W, P1dB 40.5 to 41.5 dBm, Power Gain (Gp) 8.5 to 9.5 dB. Tags: Flange. More details for FLM6472-12F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM6472-12F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    6.4 to 7.2 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C Band
  • Frequency
    6.4 to 7.2 GHz
  • Power
    40.5 to 41.5 dBm
  • Power(W)
    11.22 to 14.13 W
  • P1dB
    40.5 to 41.5 dBm
  • Power Gain (Gp)
    8.5 to 9.5 dB
  • Power Added Effeciency
    0.37
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    3250 to 3800 mA
  • IMD
    -46 to -44 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.3 to 2.6 Degree C/W
  • Package Type
    Flange
  • Package
    IA
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 5000 to 7500 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

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