FLM6472-6F Image

FLM6472-6F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM6472-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6.4 to 7.2 GHz, Power 37.5 to 38.5 dBm, Power(W) 5.62 to 7.08 W, P1dB 37.5 to 38.5 dBm, Power Gain (Gp) 8.5 to 9.5 dB. Tags: Flange. More details for FLM6472-6F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM6472-6F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      6.4 to 7.2 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      6.4 to 7.2 GHz
    • Power :
      37.5 to 38.5 dBm
    • Power(W) :
      5.62 to 7.08 W
    • P1dB :
      37.5 to 38.5 dBm
    • Power Gain (Gp) :
      8.5 to 9.5 dB
    • Power Added Effeciency :
      0.37
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1625 to 1900 mA
    • IMD :
      -46 to -44 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      4 to 4.8 Degree C/W
    • Package Type :
      Flange
    • Package :
      IB
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 2500 to 3750 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

    Technical Documents

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