FLM7785-45F Image

FLM7785-45F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM7785-45F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 46 to 46.5 dBm, Power(W) 39.81 to 44.67 W, P1dB 46 to 46.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flange. More details for FLM7785-45F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM7785-45F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      7.7 to 8.5 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      C Band
    • Frequency :
      7.7 to 8.5 GHz
    • Power :
      46 to 46.5 dBm
    • Power(W) :
      39.81 to 44.67 W
    • P1dB :
      46 to 46.5 dBm
    • Power Gain (Gp) :
      6 to 7 dB
    • Power Added Effeciency :
      0.325
    • Supply Voltage :
      10 V
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      11000 to 13000 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.1 to 1.3 Degree C/W
    • Package Type :
      Flange
    • Package :
      IB
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 24000 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.6 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 52 mA, Channel Temperature : 175 Degree C

    Technical Documents

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