FLM8596-15F Image

FLM8596-15F

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLM8596-15F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8.5 to 9.6 GHz, Power 41 to 42 dBm, Power(W) 12.59 to 15.85 W, P1dB 41 to 42 dBm, Power Gain (Gp) 6.5 to 7.5 dB. Tags: Flange. More details for FLM8596-15F can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLM8596-15F
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      8.5 to 9.6 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      X Band
    • Frequency :
      8.5 to 9.6 GHz
    • Power :
      41 to 42 dBm
    • Power(W) :
      12.59 to 15.85 W
    • P1dB :
      41 to 42 dBm
    • Power Gain (Gp) :
      6.5 to 7.5 dB
    • Power Added Effeciency :
      0.32
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      4000 to 5000 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      2.3 to 2.6 Degree C/W
    • Package Type :
      Flange
    • Package :
      IA
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 7200 to 10800 A, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Channel Temperature : 175 Degree C

    Technical Documents

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Application Note

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