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FLU35XM

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLU35XM from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power 34.5 to 35.5 dBm, Power(W) 2.82 to 3.55 W, P1dB 34.5 to 35.5 dBm, Power Gain (Gp) 11.5 to 12.5 dB. Tags: Surface Mount. More details for FLU35XM can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FLU35XM
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application Type :
      L Band
    • Frequency :
      2 GHz
    • Power :
      34.5 to 35.5 dBm
    • Power(W) :
      2.82 to 3.55 W
    • P1dB :
      34.5 to 35.5 dBm
    • Power Gain (Gp) :
      11.5 to 12.5 dB
    • Power Added Effeciency :
      0.46
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Drain Current :
      1200 to 1800 mA
    • Thermal Resistance :
      7.5 to 10 Degree C/W
    • Package Type :
      Surface Mount
    • Package :
      XM
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

    Technical Documents

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