FLX207MH-12 Image

FLX207MH-12

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FLX207MH-12 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12.5 GHz, Power 31.5 to 32.5 dBm, Power(W) 1.41 to 1.78 W, P1dB 31.5 to 32.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flange. More details for FLX207MH-12 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLX207MH-12
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    12.5 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X Band
  • Frequency
    12.5 GHz
  • Power
    31.5 to 32.5 dBm
  • Power(W)
    1.41 to 1.78 W
  • P1dB
    31.5 to 32.5 dBm
  • Power Gain (Gp)
    6 to 7 dB
  • Power Added Effeciency
    0.28
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    800 to 1200 mA
  • Thermal Resistance
    10 to 12 Degree C/W
  • Package Type
    Flange
  • Package
    MH
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.