FSU01LG

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

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The FSU01LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power Gain (Gp) 19 dB, Noise Figure 0.5 dB, Supply Voltage 3 to 6 V, Voltage - Drain-Source (Vdss) 3 to 6 V. More details for FSU01LG can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FSU01LG
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Frequency :
      2 GHz
    • Power Gain (Gp) :
      19 dB
    • Noise Figure :
      0.5 dB
    • Supply Voltage :
      3 to 6 V
    • Voltage - Drain-Source (Vdss) :
      3 to 6 V
    • Drain Current :
      10 to 40 mA
    • Thermal Resistance :
      18.5 Degree C/W
    • Note :
      Reverse Gate Current : -2.2 mA
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