FSU02LG

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FSU02LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power 23 dBm, Power(W) 0.19 W, P1dB 23 dBm, Power Gain (Gp) 17 dB. More details for FSU02LG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSU02LG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    2 GHz, Gain GaAs FET

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Frequency
    2 GHz
  • Power
    23 dBm
  • Power(W)
    0.19 W
  • P1dB
    23 dBm
  • Power Gain (Gp)
    17 dB
  • Noise Figure
    1.5 dB
  • Supply Voltage
    3 to 6 V
  • Voltage - Drain-Source (Vdss)
    3 to 6 V
  • Drain Current
    20 to 80 mA
  • Thermal Resistance
    17.5 Degree C/W
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