Note : Your request will be directed to Sumitomo Electric Device Innovations.
The FSU02LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power 23 dBm, Power(W) 0.19 W, P1dB 23 dBm, Power Gain (Gp) 17 dB. More details for FSU02LG can be seen below.
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
1250 W GaN Power Transistor from 430 to 450 MHz
8 W GaN Power HEMT Die from DC to 26 GHz
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