SG36F30S-D Image

SG36F30S-D

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SG36F30S-D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.3 to 3.7 GHz, Power 42.5 dBm, Power(W) 17.78 W, Saturated Power 44.5 to 45.5 dBm, Power Gain (Gp) 16 to 17 dB. Tags: Surface Mount. More details for SG36F30S-D can be seen below.

Product Specifications

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Product Details

  • Part Number
    SG36F30S-D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    3.3 to 3.7 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WCDMA, LTE, Base Station
  • Frequency
    3.3 to 3.7 GHz
  • Power
    42.5 dBm
  • Power(W)
    17.78 W
  • Saturated Power
    44.5 to 45.5 dBm
  • Power Gain (Gp)
    16 to 17 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    10.5 to 12.5%
  • Power Dissipation (Pdiss)
    23.8 W
  • Thermal Resistance
    5.5 to 6.5 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Forward Gate Current : 76 mA, Reverse Gate Current : -1.3 mA

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