SGC1112-100A-R Image

SGC1112-100A-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGC1112-100A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 11.4 to 12 GHz, Power 49.5 to 51 dBm, Power(W) 89.13 to 125.89 W, Power Gain (Gp) 7.5 to 9 dB, Power Added Effeciency 0.36. Tags: Flanged. More details for SGC1112-100A-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGC1112-100A-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      11.4 to 12 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      X Band
    • CW/Pulse :
      Pulse
    • Frequency :
      11.4 to 12 GHz
    • Power :
      49.5 to 51 dBm
    • Power(W) :
      89.13 to 125.89 W
    • Pulsed Width :
      100 usec
    • Power Gain (Gp) :
      7.5 to 9 dB
    • Power Added Effeciency :
      0.36
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Drain Current :
      6.1 to 7.9 A
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.4 to 1.8 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 11 A, Forward Gate Current : 6 mA, Reverse Gate Current : 4.5 mA

    Technical Documents

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