SGC1112-100A-R Image

SGC1112-100A-R

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGC1112-100A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 11.4 to 12 GHz, Power 49.5 to 51 dBm, Power(W) 89.13 to 125.89 W, Power Gain (Gp) 7.5 to 9 dB, Power Added Effeciency 0.36. Tags: Flanged. More details for SGC1112-100A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGC1112-100A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    11.4 to 12 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application Type
    X Band
  • CW/Pulse
    Pulse
  • Frequency
    11.4 to 12 GHz
  • Power
    49.5 to 51 dBm
  • Power(W)
    89.13 to 125.89 W
  • Pulsed Width
    100 usec
  • Power Gain (Gp)
    7.5 to 9 dB
  • Power Added Effeciency
    0.36
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Current
    6.1 to 7.9 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.4 to 1.8 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 11 A, Forward Gate Current : 6 mA, Reverse Gate Current : 4.5 mA

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