SGC8598-200A-R Image

SGC8598-200A-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGC8598-200A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8.5 to 9.8 GHz, Power 53 to 54 dBm, Power(W) 199.53 to 251.19 W, Power Gain (Gp) 9 to 10 dB, Power Added Effeciency 0.38. Tags: Flanged. More details for SGC8598-200A-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGC8598-200A-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      8.5 to 9.8 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      X Band
    • CW/Pulse :
      Pulse
    • Frequency :
      8.5 to 9.8 GHz
    • Power :
      53 to 54 dBm
    • Power(W) :
      199.53 to 251.19 W
    • Pulsed Width :
      100 usec
    • Power Gain (Gp) :
      9 to 10 dB
    • Power Added Effeciency :
      0.38
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Drain Current :
      11.8 to 14.5 A
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.6 to 0.8 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 22 A, Gain Flatness : 1.6 dB, Forward Gate Current : 12 mA, Reverse Gate Current : -9 mA

    Technical Documents

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