SGC8598-50A-R Image

SGC8598-50A-R

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGC8598-50A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8.5 to 9.8 GHz, Power 47 to 48 dBm, Power(W) 50.12 to 63.1 W, Power Gain (Gp) 10 to 11 dB, Power Added Effeciency 0.4. Tags: Flanged. More details for SGC8598-50A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGC8598-50A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    8.5 to 9.8 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application Type
    X Band
  • CW/Pulse
    Pulse
  • Frequency
    8.5 to 9.8 GHz
  • Power
    47 to 48 dBm
  • Power(W)
    50.12 to 63.1 W
  • Pulsed Width
    100 usec
  • Power Gain (Gp)
    10 to 11 dB
  • Power Added Effeciency
    0.4
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Current
    2.8 to 4.1 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.4 to 3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 5.5 A, Gain Flatness : 1 dB, Forward Gate Current : 4 mA, Reverse Gate Current : 2.2 mA

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