SGFCF10S-D Image

SGFCF10S-D

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGFCF10S-D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency DC to 3.7 GHz, Power 38 dBm, Power(W) 6.31 W, Saturated Power 40 to 41 dBm, Power Gain (Gp) 18.5 to 19.5 dB. Tags: Surface Mount. More details for SGFCF10S-D can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGFCF10S-D
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      DC to 3.7 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      WCDMA, LTE, Base Station
    • Frequency :
      DC to 3.7 GHz
    • Power :
      38 dBm
    • Power(W) :
      6.31 W
    • Saturated Power :
      40 to 41 dBm
    • Power Gain (Gp) :
      18.5 to 19.5 dB
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Drain Efficiency :
      11.5 to 13.5%
    • Power Dissipation (Pdiss) :
      13.5 W
    • Thermal Resistance :
      10 to 11.5 Degree C/W
    • Package Type :
      Surface Mount
    • RoHS :
      Yes
    • Storage Temperature :
      -40 to 125 Degree C
    • Note :
      Forward Gate Current : 23 mA, Reverse Gate Current : -0.3 mA

    Technical Documents

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