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SGK1314-50A

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

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The SGK1314-50A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 46 to 47 dBm, Power(W) 39.81 to 50.12 W, Gain 7 to 8 dB, Power Added Effeciency 0.29. Tags: Flanged. More details for SGK1314-50A can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK1314-50A
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      13.75 to 14.5 GHz, 7 to 8 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Application Type :
      Ku Band
    • CW/Pulse :
      CW
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      46 to 47 dBm
    • Power(W) :
      39.81 to 50.12 W
    • Gain :
      7 to 8 dB
    • Power Added Effeciency :
      0.29
    • Transconductance :
      5.1 S
    • Supply Voltage :
      24 V
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      5 to 6 A
    • Power Dissipation (Pdiss) :
      140 W
    • IMD :
      -25 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.3 to 1.6 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 11 A, Gain Flatness : 1.6 dB, Forward Gate Current : 17.6 mA, Reverse Gate Current : -5.4 mA

    Technical Documents

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