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SGK1314-60A

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK1314-60A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 47 to 48 dBm, Power(W) 50.12 to 63.1 W, Power Gain (Gp) 6 to 7 dB, Power Added Effeciency 0.32. Tags: Flanged. More details for SGK1314-60A can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK1314-60A
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      13.75 to 14.5 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Application Type :
      Ku Band
    • CW/Pulse :
      CW
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      47 to 48 dBm
    • Power(W) :
      50.12 to 63.1 W
    • Power Gain (Gp) :
      6 to 7 dB
    • Power Added Effeciency :
      0.32
    • Transconductance :
      6.2 S
    • Supply Voltage :
      24 V
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      6.6 to 9.1 A
    • Power Dissipation (Pdiss) :
      225 W
    • IMD :
      -30 to -25 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.8 to 1 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 21 A, Gain Flatness : 1.6 dB, Forward Gate Current : 20.2 mA, Reverse Gate Current : -6.4 mA

    Technical Documents

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