SGK5867-100A/001 Image

SGK5867-100A/001

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK5867-100A/001 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.85 to 6.75 GHz, Power 49.5 to 50.5 dBm, Power(W) 89.13 to 112.2 W, Gain 12.5 to 13.5 dB, Power Added Effeciency 0.45. Tags: Flanged. More details for SGK5867-100A/001 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SGK5867-100A/001
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    5.85 to 6.75 GHz, 12.5 to 13.5 dB Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    SATCOM
  • Application Type
    C Band
  • CW/Pulse
    CW
  • Frequency
    5.85 to 6.75 GHz
  • Power
    49.5 to 50.5 dBm
  • Power(W)
    89.13 to 112.2 W
  • Gain
    12.5 to 13.5 dB
  • Power Added Effeciency
    0.45
  • Transconductance
    12 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    10 to 14 A
  • Power Dissipation (Pdiss)
    212 W
  • IMD
    -25 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.55 to 0.75 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 26 A, Gain Flatness : 1.6 dB, Forward Gate Current : 24.4 mA, Reverse Gate Current : -12.8 mA

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.