SGK5872-20A Image

SGK5872-20A

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK5872-20A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.85 to 7.2 GHz, Power 41.5 to 43 dBm, Power(W) 14.13 to 19.95 W, Gain 11 to 13 dB, Power Added Effeciency 0.41. Tags: Surface Mount. More details for SGK5872-20A can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK5872-20A
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      5.85 to 7.2 GHz, 11 to 13 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Application Type :
      C Band
    • CW/Pulse :
      CW
    • Frequency :
      5.85 to 7.2 GHz
    • Power :
      41.5 to 43 dBm
    • Power(W) :
      14.13 to 19.95 W
    • Gain :
      11 to 13 dB
    • Power Added Effeciency :
      0.41
    • Transconductance :
      1.8 S
    • Supply Voltage :
      24 V
    • Input Power :
      38 dBm
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      1.6 to 2.4 A
    • Power Dissipation (Pdiss) :
      48 W
    • IMD :
      -43 to -40 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      2.7 to 3.4 Degree C/W
    • Package Type :
      Surface Mount
    • RoHS :
      Yes
    • Storage Temperature :
      -40 to 125 Degree C
    • Note :
      Saturated Drain Current : 3.9 A, Gain Flatness : 1.6 dB, Forward Gate Current : 4 mA, Reverse Gate Current : -1.9 mA

    Technical Documents

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