SGK5872-20A Image

SGK5872-20A

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK5872-20A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.85 to 7.2 GHz, Power 41.5 to 43 dBm, Power(W) 14.13 to 19.95 W, Gain 11 to 13 dB, Power Added Effeciency 0.41. Tags: Surface Mount. More details for SGK5872-20A can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK5872-20A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    5.85 to 7.2 GHz, 11 to 13 dB Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    SATCOM
  • Application Type
    C Band
  • CW/Pulse
    CW
  • Frequency
    5.85 to 7.2 GHz
  • Power
    41.5 to 43 dBm
  • Power(W)
    14.13 to 19.95 W
  • Gain
    11 to 13 dB
  • Power Added Effeciency
    0.41
  • Transconductance
    1.8 S
  • Supply Voltage
    24 V
  • Input Power
    38 dBm
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    1.6 to 2.4 A
  • Power Dissipation (Pdiss)
    48 W
  • IMD
    -43 to -40 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.7 to 3.4 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Saturated Drain Current : 3.9 A, Gain Flatness : 1.6 dB, Forward Gate Current : 4 mA, Reverse Gate Current : -1.9 mA

Technical Documents

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