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SGK6472-30A

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK6472-30A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6.4 to 7.2 GHz, Power 44 to 45 dBm, Power(W) 25.12 to 31.62 W, Gain 11.5 to 12.5 dB, Power Added Effeciency 0.4. Tags: Flanged. More details for SGK6472-30A can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK6472-30A
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      6.4 to 7.2 GHz, 11.5 to 12.5 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Application Type :
      C Band
    • CW/Pulse :
      CW
    • Frequency :
      6.4 to 7.2 GHz
    • Power :
      44 to 45 dBm
    • Power(W) :
      25.12 to 31.62 W
    • Gain :
      11.5 to 12.5 dB
    • Power Added Effeciency :
      0.4
    • Transconductance :
      3 S
    • Supply Voltage :
      24 V
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      2.7 to 4 A
    • Power Dissipation (Pdiss) :
      86.5 W
    • IMD :
      -45 to -40 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      2.2 to 2.6 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 6.5 A, Forward Gate Current : 6.1 mA, Reverse Gate Current : -3.2 mA

    Technical Documents

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