SGK7785-60A Image

SGK7785-60A

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK7785-60A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 47 to 48 dBm, Power(W) 50.12 to 63.1 W, Gain 9.5 to 11 dB, Power Added Effeciency 0.37. Tags: Flanged. More details for SGK7785-60A can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK7785-60A
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      7.7 to 8.5 GHz, 9.5 to 11 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Application Type :
      X Band
    • CW/Pulse :
      CW
    • Frequency :
      7.7 to 8.5 GHz
    • Power :
      47 to 48 dBm
    • Power(W) :
      50.12 to 63.1 W
    • Gain :
      9.5 to 11 dB
    • Power Added Effeciency :
      0.37
    • Transconductance :
      6 S
    • Supply Voltage :
      24 V
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      5.4 to 7 A
    • Power Dissipation (Pdiss) :
      112 W
    • IMD :
      -42 to -38 dBc
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.3 to 1.5 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 13 A, Gain Flatness : 1.2 dB, Forward Gate Current : 12.2 mA, Reverse Gate Current : -6.4 mA

    Technical Documents

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