SGN2731-500H-R Image

SGN2731-500H-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGN2731-500H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 56.81 to 57.4 dBm, Power(W) 480 to 550 W, Power Gain (Gp) 11.8 to 12.4 dB, VSWR 10.00:1. Tags: Flanged. More details for SGN2731-500H-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGN2731-500H-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.7 to 3.1 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      2.7 to 3.1 GHz
    • Power :
      56.81 to 57.4 dBm
    • Power(W) :
      480 to 550 W
    • Pulsed Width :
      120 usec
    • Power Gain (Gp) :
      11.8 to 12.4 dB
    • VSWR :
      10.00:1
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.55 to 0.70 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Gain Flatness : 0.5 to 1 dB, Forward Gate Current : 731 mA, Reverse Gate Current : -18 mA

    Technical Documents

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