SGN3135-500H-R Image

SGN3135-500H-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

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The SGN3135-500H-R from Sumitomo is a GaN-HEMT that operates from 3.1 to 3.5 GHz for Radar applications. It delivers an output power of more than 480 watts and a power gain of over 10.8 dB with a pulse width of up to 200µsec pulse width and duty of up to 10%. This device provides high efficiency and requires a 50 V supply. It is available in a metal ceramic hermetic package and is ideal for S-band radar applications.

Product Specifications

    Product Details

    • Part Number :
      SGN3135-500H-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      500 W GaN HEMT for S-Band Radar Applications

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      3.1 to 3.5 GHz
    • Power :
      56.81 to 57.56 dBm
    • Power(W) :
      480 to 570 W
    • Pulsed Width :
      200 usec
    • Duty_Cycle :
      10 %
    • Power Gain (Gp) :
      10.8 to 11.6 dB
    • Supply Voltage :
      50 V
    • Drain Efficiency :
      58 %
    • Impedance Zl :
      50 Ohms
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C

    Technical Documents

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