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SGN31E030MK

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGN31E030MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.1 GHz, Power 44 to 46 dBm, Power(W) 25.12 to 39.81 W, Gain 13 to 15 dB, Supply Voltage 50 V. Tags: Flanged. More details for SGN31E030MK can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGN31E030MK
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      3.1 GHz, 13 to 15 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      S Band
    • CW/Pulse :
      CW
    • Frequency :
      3.1 GHz
    • Power :
      44 to 46 dBm
    • Power(W) :
      25.12 to 39.81 W
    • Gain :
      13 to 15 dB
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Thermal Resistance :
      2 to 2.4 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Gain Flatness : 0.6 to 1.3 dB, Forward Gate Current : 39 mA, Reverse Gate Current : -2.2 mA

    Technical Documents

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