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SGNE010MK

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGNE010MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.5 GHz, Power 39 to 40.5 dBm, Power(W) 7.94 to 11.22 W, Saturated Power 39 to 40.5 dBm, Gain 15 to 16 dB. Tags: Flanged. More details for SGNE010MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGNE010MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    3.5 GHz, 15 to 16 dB Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application Type
    L Band
  • CW/Pulse
    CW
  • Frequency
    3.5 GHz
  • Power
    39 to 40.5 dBm
  • Power(W)
    7.94 to 11.22 W
  • Saturated Power
    39 to 40.5 dBm
  • Gain
    15 to 16 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Thermal Resistance
    4.5 to 5 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 13 mA, Reverse Gate Current : -0.5 mA

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