SGNE030MK Image

SGNE030MK

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGNE030MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 GHz, Power 45.5 to 46.5 dBm, Power(W) 35.48 to 44.66 W, Saturated Power 45.5 to 46.5 dBm, Gain 15 to 16 dB. Tags: Flanged. More details for SGNE030MK can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGNE030MK
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      2.7 GHz, 15 to 16 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Type :
      L Band
    • Application :
      General Purpose
    • CW/Pulse :
      CW
    • Frequency :
      2.7 GHz
    • Power :
      45.5 to 46.5 dBm
    • Power(W) :
      35.48 to 44.66 W
    • Saturated Power :
      45.5 to 46.5 dBm
    • Gain :
      15 to 16 dB
    • Power Added Effeciency :
      0.55
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Power Dissipation (Pdiss) :
      93.75 W
    • Thermal Resistance :
      2 to 2.4 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Forward Gate Current : 39 mA, Reverse Gate Current : -2.2 mA

    Technical Documents

Click to view more product details on manufacturer's website  »

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.