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SGNE070MK

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGNE070MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 900 MHz, Power 48.5 to 49.5 dBm, Power(W) 70.79 to 89.1 W, Saturated Power 48.5 to 49.5 dBm, Gain 19 to 21 dB. Tags: Flanged. More details for SGNE070MK can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGNE070MK
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      900 MHz, 19 to 21 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Type :
      L Band
    • Application :
      General Purpose
    • CW/Pulse :
      CW
    • Frequency :
      900 MHz
    • Power :
      48.5 to 49.5 dBm
    • Power(W) :
      70.79 to 89.1 W
    • Saturated Power :
      48.5 to 49.5 dBm
    • Gain :
      19 to 21 dB
    • Power Added Effeciency :
      0.7
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Power Dissipation (Pdiss) :
      118.5 W
    • Thermal Resistance :
      1.5 to 1.9 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Gain Flatness : 0.8 dB, Forward Gate Current : 94 mA, Reverse Gate Current : -5.4 mA

    Technical Documents

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