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SGNH130M1H

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGNH130M1H from Sumitomo Electric is a high-power GaN HEMT that operates from DC to 3 GHz. It delivers a power of 130 W (@ 2.45 GHz) with a gain of more than 13.1 dB and has an efficiency of 59% (@ 2.45 GHz). The HEMT is available in a small flangeless package that measures 11.8 x 6.35 mm and requires a DC supply voltage of 50 V.

Product Specifications

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Product Details

  • Part Number
    SGNH130M1H
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    130 W GaN HEMT from DC to 3 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3 GHz
  • Power
    51.1 to 51.9 dBm
  • Power(W)
    129 to 155 dBm
  • Gain
    13.1 to 13.9 dB
  • Supply Voltage
    50 V
  • Drain Efficiency
    50 to 59 %
  • Drain Current
    125 mA
  • Power Dissipation (Pdiss)
    170 W
  • Thermal Resistance
    1.1 to 1.32 deg.C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Pinch - Off Voltage : -4.0 to -1.5 V

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