TA9110K Image

TA9110K

RF Transistor by Tagore Technology

Note : Your request will be directed to Tagore Technology.

The TA9110K from Tagore Technology is a GaN Power Transistor that operates from 30 to 4000 MHz. It delivers a saturated output power of 6 W (~40 dBm) with a typical gain of 17 dB @ 1000 MHz and has a power-added efficiency of 55%. The transistor requires a DC supply of 28 - 32 V and dissipates up to 12 W of power. It is available in a 16-pin QFN package that measures 3.0 x 3.0 x 0.8 mm and is suitable for private mobile radio handsets, public safety radios, cellular infrastructure, and military radio applications.

Product Specifications

View similar products

Product Details

  • Part Number
    TA9110K
  • Manufacturer
    Tagore Technology
  • Description
    6 W GaN Power Transistor from 30 to 4000 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Cellular
  • Application
    Private mobile radio handsets, Public safety radios, Cellular infrastructure
  • CW/Pulse
    CW
  • Frequency
    30 MHz to 4 GHz
  • Saturated Power
    10 W
  • Small Signal Gain
    17 dB
  • Power Added Effeciency
    55 %
  • Supply Voltage
    28 to 32 V
  • Drain Current
    500 mA
  • Drain Bias Current
    40 mA
  • Power Dissipation (Pdiss)
    10 W
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount
  • Package
    16 Pin QFN
  • Dimension
    3 × 3 × 0.8 mm
  • RoHS
    Yes
  • Grade
    Commercial, Military
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.