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TA9210D

RF Transistor by Tagore Technology

Note : Your request will be directed to Tagore Technology.

The TA9210D from Tagore Technology is a GaN Power Transistor that operates from 30 MHz to 2.7 GHz. At 800 MHz, it delivers a saturated output power of 41.5 dBm (14.1 W) with a large signal gain of 13.5 dB, and a PAE of 54%. The device requires a supply voltage of 32 V and consumes 50 mA of current. This power transistor is available in a 32-lead QFN package that measures 3 x 6 x 0.8 mm and is ideal for use in private mobile radio handsets, public safety radios, cellular infrastructure, and military radios. It is RoHS, Reach, and Halogen Free compliant.

Product Specifications

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Product Details

  • Part Number
    TA9210D
  • Manufacturer
    Tagore Technology
  • Description
    14 W GaN Power Transistor from 30 MHz to 2.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    Cellular, Broadcast
  • Application Type
    Military, Radio
  • Application
    Private mobile radio handsets, Public safety radios, Cellular infrastructure, Military radios
  • CW/Pulse
    CW
  • Frequency
    30 MHz to 2.7 GHz
  • Power
    41.5 dBm
  • Power(W)
    14.1 W
  • Saturated Power
    41.5 dBm
  • Gain
    13.5 to 18 dB
  • Small Signal Gain
    18 dB
  • Power Added Effeciency
    54 PercentF
  • VSWR
    10:1
  • Supply Voltage
    12 to 34 V
  • Input Power
    30 dBm
  • Breakdown Voltage - Drain-Source
    120 V
  • Voltage - Drain-Source (Vdss)
    12 to 34 V
  • Drain Current
    700 mA
  • Power Dissipation (Pdiss)
    20 W
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C (max)
  • Thermal Resistance
    6.5 °C/W (junction-to-case) to 40 °C/W (junction-to-top)
  • Package Type
    QFN
  • Dimension
    3 × 6 × 0.8 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 155 Degree C

Technical Documents

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