TA9310E Image

TA9310E

RF Transistor by Tagore Technology (2 more products)

Note : Your request will be directed to Tagore Technology.

The TA9310E from Tagore Technology is a GaN Power Transistor that operates from 30 to 4000 MHz. It delivers a saturated output power of 44 dBm with a typical gain of 17.5 dB and has a power-added efficiency of 52%. The transistor requires a DC supply of 28-32 V. It is available in an 8-pin QFN package that measures 6.0 x 5.0 x 0.8 mm and is suitable for private mobile radio handsets, public safety radios, cellular infrastructure, and military radios applications.

Product Specifications

View similar products

Product Details

  • Part Number
    TA9310E
  • Manufacturer
    Tagore Technology
  • Description
    25 W GaN Power Transistor from 30 to 4000 MHz

General Parameters

  • Transistor Type
    DHEMT
  • Technology
    GaN
  • Application Industry
    Cellular, Military
  • CW/Pulse
    CW
  • Frequency
    30 MHz to 4 GHz
  • Power(W)
    ]
  • Saturated Power
    20 W
  • Gain
    17.5 dB
  • Small Signal Gain
    17.5 dB
  • Power Gain (Gp)
    14.5 dB
  • Power Added Effeciency
    52 %
  • VSWR
    8.00:1
  • Supply Voltage
    32 to 34 V
  • Input Power
    34 dBm
  • Breakdown Voltage
    120 V
  • Voltage - Drain-Source (Vdss)
    12 to 34 V
  • Voltage - Gate-Source (Vgs)
    -2.5 to -2.3 V
  • Drain Current
    1200 mA
  • Drain Bias Current
    100 mA
  • Power Dissipation (Pdiss)
    25 W
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    4.9 °C/W
  • Package
    8 Pin QFN
  • Dimension
    6 x 5 x 0.8 mm
  • RoHS
    Yes
  • Grade
    Military
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.