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The CHK015AaQIA from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 4 GHz, Power 0.1 dBm, Power(W) 0.001 W, Saturated Power 15 to 20 W, Duty_Cycle 10%. More details for CHK015AaQIA can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
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