CHK015AaQIA

Note : Your request will be directed to United Monolithic Semiconductors.

The CHK015AaQIA from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 4 GHz, Saturated Power 15 to 20 W, Duty_Cycle 10%, Small Signal Gain 16 to 18 dB, Power Added Effeciency 55%. More details for CHK015AaQIA can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHK015AaQIA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    15 to 20 W, GaN HEMT Transistor form DC to 4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Radar
  • Application
    General Purpose, 5G
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 4 GHz
  • Saturated Power
    15 to 20 W
  • Duty_Cycle
    10%
  • Small Signal Gain
    16 to 18 dB
  • Power Added Effeciency
    55%
  • Supply Voltage
    50 V
  • Input Power
    30 dBm
  • Breakdown Voltage - Drain-Source
    180 V
  • Drain Current
    800 mA
  • Gate Leakage Current (Ig)
    -0.8 A
  • Junction Temperature (Tj)
    185 Degree C
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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