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CHK8013-99F

RF Transistor by United Monolithic Semiconductors (10 more products)

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The CHK8013-99F from UMS is a GaN Power Transistor that operates from DC to 10 GHz in pulsed and CW operating modes. It provides 14 Watts of saturated output power with a small signal gain of 17 dB and has a PAE of 70%. This device requires a supply voltage of 30 V. It is manufactured using a 0.25µm gate length GaN HEMT technology on SiC substrate and requires an external matching circuitry. This high electron mobility transistor is available as a chip that measures 0.9 x 1.2 x 0.1 mm and is ideal for a variety of RF power applications such as radars and telecommunications.

Product Specifications

    Product Details

    • Part Number :
      CHK8013-99F
    • Manufacturer :
      United Monolithic Semiconductors
    • Description :
      14 W GaN Power Transistor from DC to 10 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Cellular
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 10 GHz
    • Power :
      41.46 dBm
    • Power(W) :
      14 W ( Saturated)
    • Small Signal Gain :
      17 dB
    • Power Added Effeciency :
      70%
    • Supply Voltage :
      30 V
    • Voltage - Gate-Source (Vgs) :
      -3.3 V
    • Drain Current :
      0.9 A
    • Gate Leakage Current (Ig) :
      -0.7 mA
    • Junction Temperature (Tj) :
      200 Degree C
    • Package Type :
      Die
    • Dimension :
      0.9 x 1.2 x 0.1 mm
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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