CHK8015-99F Image

CHK8015-99F

RF Transistor by United Monolithic Semiconductors (8 more products)

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The CHK8015-99F from UMS is a Gallium Nitride High Electron Mobility Transistor that operates up to 18 GHz. It provides 20 watts of power with 17 dB of signal gain and a power added efficiency of 68% @ 9 GHz. This device requires a 30 V supply and has been designed for a variety of RF power applications. It is available as a bare die that measures 0.88 x 2 x 0.1 mm. The circuit is manufactured using a 0.25µm gate length GaN HEMT technology on SiC substrate and requires an external matching circuitry.

Product Specifications

    Product Details

    • Part Number :
      CHK8015-99F
    • Manufacturer :
      United Monolithic Semiconductors
    • Description :
      20 W Power Transistor from DC to 18 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Wireless Infrastructure
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 18 GHz
    • Power :
      42.04 dBm
    • Power(W) :
      16 W
    • Saturated Power :
      20 W
    • Small Signal Gain :
      17 dB
    • Power Added Effeciency :
      0.68
    • Supply Voltage :
      30 V
    • Threshold Voltage :
      80 V
    • Drain Gate Voltage :
      120 V
    • Breakdown Voltage - Drain-Source :
      30 V
    • Voltage - Gate-Source (Vgs) :
      -3.3 to -20 V
    • Drain Current :
      1 A
    • Quiescent Drain Current :
      0.2 to 0.46 A
    • Gate Leakage Current (Ig) :
      -0.8 mA
    • Junction Temperature (Tj) :
      200 Degree C
    • Thermal Resistance :
      6 Degree C/W
    • Package Type :
      Die
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 150 Degree C
    • Note :
      Gate Currnet Forward Mode : 0 to 16 mA, Pich Off Voltage : -4 to -2.8 V, Saturated Drain Current : 3.6 A

    Technical Documents

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