CHK8101a99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHK8101a99F from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 6 GHz, Power 0.1 dBm, Power(W) 0.001 W, Saturated Power 20 W, Small Signal Gain 14 dB. More details for CHK8101a99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHK8101a99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    20 W, GaN HEMT Transistor form DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Radar
  • Application
    General Purpose, 5G
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    0.1 dBm
  • Power(W)
    0.001 W
  • Saturated Power
    20 W
  • Small Signal Gain
    14 dB
  • Power Added Effeciency
    60%
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    180 V
  • Drain Current
    640 mA
  • Gate Leakage Current (Ig)
    -0.4 A
  • Junction Temperature (Tj)
    230 Degree C
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 150 Degree C

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