CHK9013-99F Image

CHK9013-99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHK9013-99F from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 8 GHz, Power 49.29 dBm, Power(W) 85 W, Saturated Power 88 W, Small Signal Gain 18 dB. Tags: Die, Chip. More details for CHK9013-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CHK9013-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    DC to 8 GHz Low Noise GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Wireless Infrastructure
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 8 GHz
  • Power
    49.29 dBm
  • Power(W)
    85 W
  • Saturated Power
    88 W
  • Small Signal Gain
    18 dB
  • Power Added Effeciency
    0.65
  • Supply Voltage
    30 V
  • Threshold Voltage
    80 V
  • Drain Gate Voltage
    120 V
  • Breakdown Voltage - Drain-Source
    30 V
  • Voltage - Gate-Source (Vgs)
    -3.3 to -20 V
  • Drain Current
    5.7 A
  • Quiescent Drain Current
    1.1 to 2.5 A
  • Gate Leakage Current (Ig)
    -4.4 mA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    2.1 Degree C/W
  • Package Type
    Die, Chip
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Gate Currnet Forward Mode : 0 to 90 mA, Pich Off Voltage : -4 to -2.8 V, Saturated Drain Current : 20 A

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