CHKA011aSXA

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The CHKA011aSXA from UMS is a GaN Transistor that operates up to 1.5 GHz in Pulsed and CW modes. It provides 150 watts of saturated output power (25µs, 10% duty cycle) with an efficiency of 75%. It is available in a flanged metal-ceramic package and is ideal for radar and telecommunication applications. This product is manufactured using a 0.5µm gate length GaN HEMT process and requires an external matching network.

Product Specifications

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Product Details

  • Part Number
    CHKA011aSXA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    150 W GaN Transistor from DC to 1.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 1.5 GHz
  • Power
    51.14 dBm
  • Power(W)
    130.02 W
  • Saturated Power
    150W (typ), 130W (min)
  • Efficiency
    75 %
  • Supply Voltage
    50 V
  • Drain Current
    640 mA
  • Package Type
    Flanged
  • Package
    Ceramic