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CHKA011aSXA

RF Transistor by United Monolithic Semiconductors (9 more products)

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The CHKA011aSXA from UMS is a GaN Transistor that operates up to 1.5 GHz in Pulsed and CW modes. It provides 150 watts of saturated output power (25µs, 10% duty cycle) with an efficiency of 75%. It is available in a flanged metal-ceramic package and is ideal for radar and telecommunication applications. This product is manufactured using a 0.5µm gate length GaN HEMT process and requires an external matching network.

Product Specifications

    Product Details

    • Part Number :
      CHKA011aSXA
    • Manufacturer :
      United Monolithic Semiconductors
    • Description :
      150 W GaN Transistor from DC to 1.5 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Cellular
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 1.5 GHz
    • Saturated Power :
      150W (typ), 130W (min)
    • Efficiency :
      75 %
    • Supply Voltage :
      50 V
    • Drain Current :
      640 mA
    • Package Type :
      Flanged
    • Package :
      Ceramic
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