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The CHKA011aSXA from UMS is a GaN Transistor that operates up to 1.5 GHz in Pulsed and CW modes. It provides 150 watts of saturated output power (25µs, 10% duty cycle) with an efficiency of 75%. It is available in a flanged metal-ceramic package and is ideal for radar and telecommunication applications. This product is manufactured using a 0.5µm gate length GaN HEMT process and requires an external matching network.
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
25 W LDMOS FET from 500 to 1400 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
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